Year: 2026
Type: article
Abstract: films grown on sapphire via metalorganic chemical vapour deposition, with thickness 350-1000 nm and Al fraction (x) from 0% to 45%, is presented. Al incorporation in the films showed a linear relation with nominal Al composition calculated from precursor flow rate, and the optical bandgap increased from 4.96 eV to 5.44 eV with a bowing parameter of 1.7 ± 0.5 eV. A high Al fraction led to reduced crystallinity, increased surface roughness, and diminished cathodoluminescence intensity. The topography revealed elongated surface features that evolved with Al content, and luminescence spectra exhibited a blueshift in peak emission attributed to the widening of the bandgap. These findings highlight the trade-off between bandgap tuning and material quality, informing future growth strategies for future electronic and optical devices.
Source: Materials
DOI: 10.3390/ma19040672
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,137
OpenAlex ID: W7128470744