Work

Gate resistance thermometry measurements on fully vertical AlGaN (2.5%) FinFETs

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0309620

Authors: Navya Sri Garigapati, Adamantia Logotheti, Byeongchan So, Jovana Malm, Pawel Prystawko, Izabella Grzegory, Muhammad Nawaz, Mikael Bjork, Vanya Darakchieva, Erik Lind

Institutions: Lund University, Volvo (Sweden), Volvo Cars (Sweden), NanoLund, Institute of High Pressure Physics, Polish Academy of Sciences, Hitachi (Sweden), Linköping University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: VINNOVA, Knut och Alice Wallenbergs Stiftelse, Vetenskapsrådet, Narodowe Centrum Badań i Rozwoju

Awards: G3970368980, Terahertz Electron Paramagnetic Resonance Ellipsometry for defect characterization of ultrawide bandgap semiconductors, Centrum för III-Nitrid halvledarteknologi, C3NiT, Pełny pionowo zintegrowany łańcuch technologiczny dla pionowej elektroniki GaN-on-GaN: od podłoża GaN do Inteligentnego Banku Energii, G8898409313

OpenAlex ID: W7128481552

FWCI: 4.786

Cites: 20

Cited by: 2

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