Work

3-dB bandwidth enhanced InGaAs PIN photodiode by inductive CPW electrode for datacenter applications

Year: 2026

Type: article

Abstract: We report on a 3-dB bandwidth extension technique achieved through a coplanar waveguide (CPW) electrode design that imposes inductive gains in a backside-lens-integrated InGaAs positive-intrinsic-negative (PIN) photodiode. The inductive CPW electrodes are analyzed in detail using an equivalent circuit model in which the transit time of the photo-generated carriers has been included. The transit times for the electrons and holes have been analyzed numerically. By including the transit time effect in the equivalent circuit model, the extracted RLC parameters show a good consistency with measured frequency response data. As a result, the 3-dB bandwidth has been extended from 48 GHz to over 67 GHz at a -2.5 V bias voltage simply by reconfiguring the CPW electrode design.

Source: Optics Express

DOI: 10.1364/oe.582056

Authors: Shinmo An, Duk-Jun Kim, Seok-Jun Yun, Dong-Hun Lee, Young-Tak Han

Language: English

Topic: Semiconductor Lasers and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,270

Funders: National Research Foundation of Korea, Institute for Information and Communications Technology Promotion

Awards: G5597521577, G7094456608, G8564167267