Work

Real-time evolution of performance in β -Ga2O3 Schottky barrier diodes under on-state stress

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0309261

Authors: Maolin Zhang, Yingxu Wang, Hengyu Zhang, Haoxuan Peng, Xueqiang Ji, Weihua Tang, Yufeng Guo

Institution: Nanjing University of Posts and Telecommunications

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G7449652921, G8011346030, G8907333353

OpenAlex ID: W7128587472

FWCI: 2.056

Cites: 27

Cited by: 2

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