Work

Development of ScAlN/GaN High Electron Mobility Transistor on silicon substrate for RF applications

Year: 2025

Type: conference-paper

Abstract: International audience

Source: HAL (Le Centre pour la Communication Scientifique Directe)

Authors: El Whibi, Seif, Bhat, Nagesh, Fouzi, Yassine, Defrance, N., Bougrioua, Zahia, de Jaeger, Jean-Claude, Bartoli, Florian, Hugues, Maxime, Cordier, Yvon, Lesecq, Marie

Institutions: Centre National de la Recherche Scientifique, Université de Lille, Institut d'Electronique, de Microélectronique et de Nanotechnologie, Université Polytechnique Hauts-de-France, Centrale Lille Institut, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funders: European Commission, Agence Nationale de la Recherche, Electronic Components and Systems for European Leadership

Awards: G1332077954, Réseau national sur GaN, Towards the co-integration of high frequency devices on epitaxial ScAlN, GaN for Advanced Power Applications

OpenAlex ID: W7128664184

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