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Active Elements of Optical Phase Shifters Based on Thin Ge2Sb2Se4Te, Sb2Se3, and Bi2Se3 Films

Year: 2025

Type: article

Abstract: The phase shift of an optical beam in free space due to the formation of a crystal structure in controlled elementary cells based on thin films of phase-change materials Ge 2 Sb 2 Se 4 Te, Sb 2 Se 3 , and Bi 2 Se 3 under the control effect of pulsed laser radiation has been experimentally studied. The change in the phase of the studied optical beam passing through a controlled cell of phase-changing material relative to the control beam in a Jamin interferometer has been demonstrated. The phase shift has been estimated using analytical expressions.

Source: Journal of Experimental and Theoretical Physics Letters

DOI: 10.1134/s0021364025609819

Authors: A. A. Burtsev, V. V. Ionin, A. V. Kiselev, V. A. Mikhalevsky, N. N. Eliseev, A. A. Nevzorov, E. V. Khaidukov, A. A. Lotin

Institutions: Kurchatov Institute, National University of Science and Technology, D. Mendeleyev University of Chemical Technology of Russia

Language: English

Topic: Phase-change materials and chalcogenides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W7128766312

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Cites: 31

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