Work

Modification of lanthanum-doped tin oxide thin films by 532 nm laser annealing for H 2 S gas sensors

Year: 2026

Type: article

Source: Modern Physics Letters B

DOI: 10.1142/s0217984926400051

Authors: Qian-Yu Yi, Sheng-Chang Wang, Jian-An Su, Wen-Tse Hsiao, Yu-Jen Hsiao

Institutions: Southern Taiwan University of Science and Technology, National Institutes of Applied Research, National Center for Instrumentation Research, National Kaohsiung University of Science and Technology

Language: English

Topic: Gas Sensing Nanomaterials and Sensors

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Science and Technology, Taiwan

OpenAlex ID: W7128795413

FWCI:

Cites: 24

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