Work

Polaron-Induced Midgap States in Ovonic Threshold Switching Material for 3D Phase-Change Memory Applications

Year: 2026

Type: article

Source: The Journal of Physical Chemistry Letters

DOI: 10.1021/acs.jpclett.5c03532

Authors: Huan-Ran Ding, Tian-Yu Zhao, Nian-Ke Chen, Bai-Qian Wang, Shun-Yao Qin, Meng Niu, Si-Bo Wang, Yu-Ting Huang, Ming Xu, Xian-Bin Li

Institutions: Jilin University, State Key Laboratory on Integrated Optoelectronics, Huazhong University of Science and Technology

Language: English

Topic: Phase-change materials and chalcogenides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Science and Technology Major Project, Fundamental Research Funds for the Central Universities

Awards: G3441189069, G3883958191, G456371180, G8776755461

OpenAlex ID: W7128816208

FWCI:

Cites: 55

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