Work

Electrical modelisation of a bitflip in SRAM cell memory induced by laser fault injection

Year: 2026

Type: article

Abstract: An electrical model of the bitflip in SRAM under laser illumination simulating laser fault injection is proposed. This model is based on a bipolar phototransistor responsible of the amplified induced photocurrent resulting to the Off/On switching of MOSFET in CMOS inverter. In this model a photodiode is connected between the collector(drain)/base(bulk) of the parasitic bipolar transistor. In this configuration the photodiode acts as photocurrent generator and the bipolar transistor as amplifier. The ability of this model to simulate the laser fault injection is first shown in CMOS inverter and then in SRAM cell memory.

Source: Microelectronics Reliability

DOI: 10.1016/j.microrel.2026.116052

Authors: Laurent Pichon, Laurent Le Brizoual, Edna Ferrucho Alvarez, Ludovic Claudepierre

Institutions: Centre National de la Recherche Scientifique, Institut d'Électronique et des Technologies du numéRique, Université de Rennes

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,280

OpenAlex ID: W7128920033

FWCI: 1.715

Cites: 6

Cited by: 1

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