Work

Effect of gate capacitance ratio on ion-sensitive FET memory

Year: 2026

Type: article

Abstract: 1. AbstractThis paper introduces the ISFET Memory device, which combines nonvolatile memory capabilities with the traditional ISFET functionality for pH sensing applications. The device's performance is evaluated in both writing and erasing modes, with particular emphasis on how adjusting the gate capacitance ratio (GCR) influences the operating voltages and sensitivity. Results show that optimizing the GCR to 0.43 significantly reduces the voltages required for writing and erasing operations, while also enhancing sensitivity across a broader pH range. The device achieves maximum sensitivities of 1609mV/pH in the writing state and 940mV/pH in the erasing state, far exceeding the ideal ISFET sensitivity of 58.2mV/pH. Furthermore, the device demonstrates adaptability to different pH ranges: the writing mode is better suited for pH values from 2 to 10, whereas the erasing mode is more effective for the remaining pH range.

Source: Solid-State Electronics

DOI: 10.1016/j.sse.2026.109350

Authors: Henrique Lanfredi Carvalho, Pedro Henrique Duarte, Ricardo Cardoso Rangel, Joao Antonio Martino

Institution: Universidade de São Paulo

Language: English

Topic: Analytical Chemistry and Sensors

Subfield: Bioengineering

Field: Chemical Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,410

Funders: Fundação de Amparo à Pesquisa do Estado de São Paulo, Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, Conselho Nacional de Desenvolvimento Científico e Tecnológico