Work

Modeling of I–V Characteristics of AlInGaN/GaN HEMTs using Deep Neural Networks

Year: 2026

Type: article

Source: Semiconductors

DOI: 10.1134/s1063782625602791

Authors: Kavita Thorat Upadhyay, Prateek Nahar, Arvind Upadhyay, Abivyakt Bhati

Institution: IPS Academy

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7128996292

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Cites: 27

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