Contribution in exciton, donor and acceptor energy determining in a high-purity ZnS vapor-deposited layer
Year: 2026
Type: article
Abstract: A thin layer of a high quality ZnS grown on a GaAs (001) substrate by MOCVD at 350°C and characterized by photoluminescence (PL) at 20 K and reflectivity (at 20 K) allowed us to determine the energy of free and bound excitons as well as those of the impurities present in our ZnS. By reflectivity we obtained two free excitons Ex and Ex(n = 2) respectively at 3.8017 and 3.8245 eV, showing a high quality of our layer. The energy levels of the impurities are assigned to bound excitons (D 0 X; A 0 X; eA 0 ) and phonon replicas. Using the theory developed by Hopfield and by Sharma and Rodriguez, the transition at 3.7592 eV is attributed to a two electrons satellite (TES), using the hydrogenoid model. Taking the hydrogen model, we determined the value of the gap energy, Eg = 3.8321 eV.
Source: Results in Physics
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,920
OpenAlex ID: W7129036567