Work

Exploring the Potential of MgZnO/ZnO High Electron Mobility Transistors in High-Frequency and Low-Noise Applications

Year: 2026

Type: article

Source: Semiconductors

DOI: 10.1134/s1063782625603620

Authors: Vinothkumar Karuppiah, Kaleel Rahuman Abdul Kader

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7129080562

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Cites: 28

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