Sub-1V, flexible, all-polymer complementary logic circuits based on electrolyte-gated transistors
Year: 2026
Type: article
Abstract: Electrolyte-gated transistors (EGTs) are typically limited to p-type operation, with stable n-type devices remaining scarce. In this study, we demonstrate high-performance n-type EGTs using a poly(benzimidazobenzophenanthroline) (BBL) polymer semiconductor gated by ionogel electrolytes. Electrochemical doping in BBL induces ion pathways in amorphous regions during initial doping, facilitating efficient electron transport. This yields exceptional device performance, including a geometry-normalized transconductance of 4.6 S cm −1 , an ON/OFF ratio of ≈10 5 , a product of electron mobility and volumetric capacitance (μC* ≈ 16.4 F cm –1 V –1 s –1 ), and minimal hysteresis (<0.1 V). These features surpass most reported n-type EGTs, demonstrating the importance of ion-driven electrochemical doping in BBL. Furthermore, we not only fabricate all-polymer complementary inverters, NAND, and NOR gates but also demonstrate flexible circuits by integrating n-type BBL and p-type polythiophene EGTs.
Source: npj Flexible Electronics
Language: English
Subfield: Polymers and Plastics
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $4,090
Funders: National Science Foundation, National Research Foundation, Ministry of Trade, Industry and Energy, Korea Institute for Advancement of Technology, Korea Research Institute of Chemical Technology, Korea Basic Science Institute, National Research Foundation of Korea, Ministry of Science and ICT, South Korea, Materials Research Science and Engineering Center, Harvard University, Division of Materials Research
OpenAlex ID: W7129106253