Work

N-doped Ge-rich GST film crystallization via C-AFM-generated electrical pulses

Year: 2026

Type: article

Source: Materials Science in Semiconductor Processing

DOI: 10.1016/j.mssp.2026.110542

Authors: Chaymaa Boujrouf, Marc Bocquet, Siham Hassak, Maxime Bertoglio, Loïc Patout, Yannick Le Friec, Alain Portavoce

Institutions: Centre National de la Recherche Scientifique, Aix-Marseille Université, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence, STMicroelectronics (France)

Language: English

Topic: Phase-change materials and chalcogenides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W7129325587

FWCI: 2.231

Cites: 43

Cited by: 2

Related to: 10