Investigation of surface reactions of etched SiN films using HF/PF3 gas mixture plasma under cryogenic conditions via in-line XPS: The role of ammonium salts in etch rate enhancement
Year: 2026
Type: article
DOI: 10.1116/6.0005201
Institution: KIOXIA Corporation (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7129438200
