Work

High-performance GaN HEMTs with over 2 MV cm −1 breakdown field and 73% PAE via an AlN super back barrier/ultra-thin GaN channel heterostructure

Year: 2026

Type: article

Source: Nanotechnology

DOI: 10.1088/1361-6528/ae46a5

Authors: Wenjun Liu, Yachao Zhang, Zhizhe Wang, Kai Su, Shenglei Zhao, Shengrui Xu, Jinfeng Zhang, Yixin Yao, Baiqi Wang, Yaolong Dong, Yue Hao, Jincheng Zhang

Institutions: Xidian University, China Electronic Product Reliability and Environmental Test Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China, Natural Science Basic Research Program of Shaanxi Province

Awards: G3925733209, G4408997430, G4450168640

OpenAlex ID: W7129619141

FWCI:

Cites: 41

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