Work

Physics-based full-band GaN high-electron-mobility transistor simulation suggests upper bound of LO phonon lifetime

Year: 2026

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/5.0315424

Authors: Ankan Ghosh Dastider, Matt Grupen, Ashwin Tunga, Shaloo Rakheja

Institutions: University of Illinois Urbana-Champaign, United States Air Force Research Laboratory, Wright-Patterson Air Force Base

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Defense Sciences Office, DARPA, Air Force Office of Scientific Research

Awards: CAREER: A multi-scale and hierarchical computational framework to model III-nitride devices operating in the near-terahertz regime, G448872832, G963259615

OpenAlex ID: W7130356704

FWCI: 2.475

Cites: 37

Cited by: 1

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