Work

First observations of avalanche-like behavior in p-GaN gate HEMTs with the buffer avalanche triggered layer

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0293431

Authors: Cheng Yu, Wanjun Chen, Fangzhou Wang, Zhuocheng Wang, Xiaochuan Deng, Zheyu Huang, Ruize Sun, Bo Zhang, Guojian Ding, Haiqiang Jia, Yang Wang

Institutions: University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices, Songshan Lake Materials Laboratory

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G5428230992

OpenAlex ID: W7130416504

FWCI:

Cites: 9

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