Work

Novel Growth Pattern for Improving the Growth Quality of GaN Films during Deposition on a Nanocosine-Patterned Substrate by Molecular Dynamics Simulation

Year: 2026

Type: article

Source: Crystal Growth & Design

DOI: 10.1021/acs.cgd.5c01740

Authors: Lianxin Li, Tinghong Gao, Qian Chen, Jin Huang, Bei Wang, Fuhong Ren

Institution: Guizhou University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Guizhou Science and Technology Department

Awards: G2716247070, G4364478544, G5759542906

OpenAlex ID: W7130513706

FWCI: 2.397

Cites: 50

Cited by: 1

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