Work

Comprehensive Enhancements of GaN Ultraviolet Photodiodes via Indium-Surfactant-Assisted Mg-δ-Doped p-Type GaN

Year: 2026

Type: article

Abstract: Front-illuminated GaN-based p-i-n photodiodes (PDs) incorporating indium-surfactant -assisted (ISA) Mg-δ-doped p-GaN were fabricated and systematically characterized. Hall-effect measurements at room temperature revealed a hole concentration of~1.5 × 1018 cm−3 in the ISA Mg-δ-doped p-GaN, significantly higher than that of uniformly Mg-doped p-GaN (~3.7 × 1017 cm−3). Devices employing ISA Mg-δ-doped p-GaN exhibited reduced leakage current, enhanced responsivity, faster response speed, improved reliability, and lower noise current compared to control PDs. These comprehensive performance enhancements, attributed to the improved crystalline quality and the optimized electric field distribution, suggest significant potential in practical UV applications.

Source: Electronics

DOI: 10.3390/electronics15050908

Authors: Bin Li, Hailong Wang, Yingda Chen, Hao Jiang

Institutions: Guangdong Open University, Sun Yat-sen University, State Key Laboratory of Optoelectronic Materials and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,896

Funders: National Natural Science Foundation of China, Natural Science Foundation of Guangdong Province