Work

Extrinsic and intrinsic nonradiative recombination channels in deep ultraviolet ( λ < 230 nm) light emitting heterostructures made of group III element nitrides

Year: 2026

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/5.0313804

Authors: Alexandra Ibanez, Patrik Ščajev, M. Ajmal Khan, Kohei Fujimoto, Sunanda Mitra, Pierre Valvin, Guillaume Cassabois, Mathieu Leroux, Julien Brault, Hideki Hirayama, Bernard Gil

Institutions: Centre National de la Recherche Scientifique, Université de Montpellier, Laboratoire Charles Coulomb, Université Montpellier 1, Vilnius University, RIKEN, Université Côte d'Azur, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Institut Universitaire de France

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Agence Nationale de la Recherche

Awards: Réseau national sur GaN, p-Doping Engineering of AlGaN Materials

OpenAlex ID: W7131229575

FWCI: 2.473

Cites: 50

Cited by: 1

Related to: