Work

Understanding and Tuning Mobile Interfaces in Ferroelectric Hf0.5Zr0.5O2 Thin Films in Relation to Microstructure

Year: 2025

Type: article

Abstract: Publication status: Published

Source: Apollo (University of Cambridge)

Authors: Becker, Maximilian T, Park, Yoonsang, Kim, Kihong, Kim, Ji Soo, Strkalj, Nives, Jan, Atif, Di Martino, Giuliana, Tsai, Benson K, Wang, Haiyan, Lu, Ping, Choe, Duk‐Hyun, MacManus‐Driscoll, Judith L

Institutions: University of Cambridge, Hahn-Schickard-Gesellschaft für angewandte Forschung, Samsung Advanced Institute of Technology (South Korea), Institute of Physics, Purdue University West Lafayette, Sandia National Laboratories

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

Funders: UK Research and Innovation, Royal Academy of Engineering, Samsung, Horizon 2020 Framework Programme, Engineering and Physical Sciences Research Council

Awards: G2741095785, G354022056, DTP 2018-19 University of Cambridge, G4073056152, G5759392967, Plasmon-Enhanced FerroElectric Discovery, G6875110320, DTP 2020-2021 University of Cambridge, G8511283360

OpenAlex ID: W7133287333

FWCI:

Cites: 24

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