Work

量子阱厚度对InGaN单量子阱发光二极管静态和动态特性的影响

Year: 2026
Type: article
Abstract: On December 01, 2025, a team of experts led by CHEN Gui-chu from the School of Department of electronic information published an article in the 发光学报, introduces its research progress in the field of single-quantum-well InGaN/GaN light-emitting diodes. Expert CHEN Gui-chu established the circuit model based on standard rate equations, which provides solutions to solve the impact of quantum well thickness on static and dynamic performances of LEDs.
Language: English
Open Access status: bronze
OpenAlex ID: W7133350829
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