Work

Magnetotransport in high-mobility metamorphic InGaAs/InAlAs heterostructures with high InAs content

Year: 2026

Type: article

Abstract: Magnetotransport studies of high-mobility metamorphic heterostructures containing InxGax−1As quantum well (QW) with a high InAs content (x ≥ 0.85) have been carried out. The scattering rate can be effectively controlled by adjusting the spacer thickness between the QW and the δ-doping layer. By analyzing the temperature and angle dependences of the Shubnikov–de Haas oscillations, the effective mass m∗, the quantum lifetime τq, the effective g∗-factor, and the nature of the scattering potential were determined. Estimates were also carried out within the framework of the kp Kane model, which confirm a significant manifestation of nonparabolicity in the measured values of m∗.

Source: Journal of Applied Physics

DOI: 10.1063/5.0302799