Nitrogen-doped graphene quantum dots (N-GQDs) for high-performance self-powered UV photodetectors
Year: 2026
Type: article
Abstract: This study presents the fabrication and characterization of a self-powered ultraviolet (UV) photodetector based on nitrogen-doped graphene quantum dots (N-GQDs) as the active material, integrated into a lateral metal–semiconductor–metal (MSM) device configuration. Here, the N-GQDs were synthesized via the pulsed laser ablation (PLA) method. The as-prepared N-GQDs were investigated through structural, optical, and electrical characterizations, confirming their nitrogen incorporation and high crystallinity, strong ultraviolet absorption and efficient charge transport. A UV photodetector fabricated with as-synthesized N-GQDs exhibits excellent performance under 365 nm illumination, including strong photocurrent (61.25 μA) with negligible dark current (1.7 μA) at +1 V, high responsivity (0.25 A/W), detectivity (1.05 × 1011 Jones), and external quantum efficiency (84%). Transient measurements reveal rise (264 ms) and decay (293 ms) times with stable, repeatable operation at zero bias voltage, confirming self-powered capability. This study demonstrates the promising use of N-GQDs as a key material for self-powered UV photodetectors, opening new avenues for next generation flexible, low cost, and energy-efficient optoelectronic devices. Further improvements in device optimization and integration with other materials can enhance performance and broaden the scope of applications, including wearable electronics, environmental monitoring, and security systems.
Source: Journal of Applied Physics
DOI: 10.1063/5.0301201
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,500
OpenAlex ID: W7136386476