Work

Investigation of electrical properties of fabricated Schottky diodes with organic interfaces in terms of radiation

Year: 2026

Type: article

Abstract: The behavior of metal/semiconductor structures with organic interfaces exposed to proton radiation in radiation environments was investigated. For this purpose, organic-based Schottky devices have been fabricated within laboratory facilities, and the fundamental electrical parameters of structures have been investigated using graphs. The current-voltage (I-V) characteristics of metal/methyl-red/semiconductor Schottky devices before and after irradiation have been obtained, and changes in their electrical parameters have been investigated using these characteristics. This study is important in the context of energy storage and protection in power applications of electronic devices for space grade. Recently, energy storage technologies and power systems resistant to changes in radiation environments has become critical in electronic power applications.

Source: International Journal of Energy Studies

DOI: 10.58559/ijes.1886286

Authors: Tuğba Hacıosmanoğlu, Hande Karadeniz

Institution: Giresun University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: bronze

Funder: Giresun Üniversitesi