Work

Quantitative insight into illumination-induced barrier lowering mediated by self-trapped-holes in Ga2O3 Schottky photodiodes

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0310226

Authors: X. Y. Pei, S. H. Gu, F.-F. Ren, D. W. Yan, Y. Yang, S. L. Gu, R. Zhang, J. D. Ye

Institutions: Nanjing University, Jiangnan University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Jiangsu Provincial Key Research and Development Program, National Key Research and Development Program of China

Awards: G2103278621, G2241681611, G2474365359, G4700815263, G48667755

OpenAlex ID: W7138093337

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Cites: 32

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