Year: 2026
Type: article
Abstract: In this letter, we present fast readout of Pauli spin blockade phenomena and interdot coupling tunability in a silicon double quantum dot (DQD) fabricated using industry-compatible processes. The interdot couplings are tuned with a second self-aligned gate layer. The charge sensing and spin readout are performed by using gate-based reflectometry techniques. The results pave the way for scalable fast readout of large-scale industry-standard manufactured Si spin qubit arrays.
Source: IEEE Electron Device Letters
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W7138212033
