Work

High mobility quaternary AlGaScN/GaN heterostructures grown by metalorganic chemical vapor deposition

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0315491

Authors: V. R. Muthuraj, C. E. Vozel, M. Kim, F. Wu, C. J. Clymore, A. Almogbel, S. Nakamura, J. S. Speck, U. K. Mishra, S. Keller, S. P. DenBaars

Institutions: University of California, Santa Barbara, Seoul Semiconductor (South Korea), King Abdulaziz City for Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Korea Institute for Advancement of Technology, King Abdulaziz City for Science and Technology, Solid State Lighting and Energy Electronics Center, University of California Santa Barbara

Award: G7686501635

OpenAlex ID: W7138968271

FWCI: 4.749

Cites: 54

Cited by: 2

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