Features of Dissipative Processes during Annealing of Silicon Structures with Buried Silicate Layers
Year: 2025
Type: article
Source: Russian Microelectronics
Author: Yu. I. Denisenko
Institution: Kurchatov Institute
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7140095000