Model of Accumulation of Surface States in p-MOS Transistors under Negative Bias
Year: 2025
Type: article
Source: Russian Microelectronics
Authors: O. V. Aleksandrov, N. N. Morozov
Institution: Saint Petersburg State Electrotechnical University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7140098288