Work

Resistive Switching of Memristors Based on (CoFe)x(SiO2)100–x Nanocomposite and LiNbO3 Layers with Ni Electrode

Year: 2025

Type: article

Source: Russian Microelectronics

DOI: 10.1134/s1063739725601122

Authors: S. N. Nikolaev, G. S. Nikolaev, A. V. Sitnikov, V. A. Demin, V. V. Rylkov

Institutions: Kurchatov Institute, Voronezh State Technical University, Russian Academy of Sciences, Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7140099906

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Cites: 18

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