Physical Principles of in situ Sidewall Profile Control in Cryogenic Plasma Etching of HAR Silicon Microstructures
Year: 2025
Type: article
Source: Russian Microelectronics
Institution: Kurchatov Institute
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7140100586
