Work

Mathematical Modeling of Charge Transport in the Dielectric Layer of a HfOx Memristor Taking into Account Single Charged Traps

Year: 2025

Type: article

Source: Russian Microelectronics

DOI: 10.1134/s1063739725601821

Authors: D. R. Islamov, T. M. Zalyalov, V. A. Voronkovskii, A. K. Markelova, A. A. Pil’nik, T. V. Perevalov, M. N. Davydov, A. A. Chernov

Institutions: Russian Academy of Sciences, Novosibirsk State University, Siberian Branch of the Russian Academy of Sciences, Institute of Semiconductor Physics, Institute of Thermophysics, Lavrentyev Institute of Hydrodynamics

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7140110665

FWCI: 0.228

Cites: 10

Cited by: 1

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