Symmetric pulse-enabled highly linear analog switching in ALD-grown HfO2/Ta2O5-based memristor for multi-level storage and synaptic applications
Year: 2026
Type: article
Abstract: Analog memristors with multilevel cells are suitable for analog in-memory and neuromorphic applications. Herein, we report a 2-bit/cell complementary-metal-oxide-semiconductor (CMOS)compatible HfO2/Ta2O5 bilayer memristor with both TiN electrodes fabricated via single thermal atomic layer deposition at 300 ℃. The fabricated devices exhibit stable bipolar switching characteristics distinguished between both low resistance state (LRS) and the high resistance state (HRS) with a P/E endurance of 10 5 WRITE cycles, as well as show better retention property beyond 10 4 s. The devices exhibited excellent uniformity in terms of low device-to-device (D2D) and low cycle-to-cycle (C2C) variation. Furthermore, analog switching responses are implemented with the pulse width from 2 ms to 500 µs, and the corresponding percentage change in the device resistance was measured. The results exhibit a significant change in the device resistance even at 500 µs, with an overall change in the device resistance in the range of 10-17%. In addition, the performance of the devices has been verified for neuromorphic applications using calibrated data. The non-linearity of 0.15, including highly stable synaptic plasticity, has been achieved using symmetric pulses, making the devices compatible for designing an analog memristor-based neuromorphic computing system hardware.
Source: Frontiers in Nanotechnology
Institutions: Indian Institute of Technology Patna, University of Edinburgh
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,077
OpenAlex ID: W7140112752