Work

Spatially Quantitative Profiling of Defect Density for Hydrogen-Induced Passivation Mechanism of Metal–Insulator–Semiconductor Photoanodes

Year: 2026

Type: article

Source: Journal of the American Chemical Society

DOI: 10.1021/jacs.6c01240

Authors: Yuting Tong, Shujie Wang, Yangning Zhang, Bin Liu, Gong Zhang, Yuan Cai, Yixian Wang, Peng Zhang, Tuo Wang, Jinlong Gong

Institutions: Tianjin University, Collaborative Innovation Center of Chemical Science and Engineering Tianjin, National University of Singapore, Tianjin Normal University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: National Natural Science Foundation of China, Higher Education Discipline Innovation Project, National Key Research and Development Program of China

Awards: G2241568543, G3474161743, G4208375181, G5058986582, G6192987231, G7646326654

OpenAlex ID: W7140125331

FWCI:

Cites: 78

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