Work

Modification of Constant Voltage Stress Method for Characterizing Time-Dependent Dielectric Breakdown of Thin Gate Dielectrics of MOS Devices

Year: 2025

Type: article

Source: Russian Microelectronics

DOI: 10.1134/s1063739725601985

Authors: D. V. Andreev, S. A. Kornev, V. M. Maslovsky, V. V. Andreev

Institutions: Bauman Moscow State Technical University, Moscow Institute of Physics and Technology

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7140129783

FWCI: 0.227

Cites: 27

Cited by: 1

Related to: