Work

Charge Transport in MIS Structures ITO/[GeOx](z)[SiO2](1–z)/Si

Year: 2025

Type: article

Source: Russian Microelectronics

DOI: 10.1134/s1063739725601699

Authors: I. Yushkov, A. Gismatulin, G. Kamaev, M. Vergnat, V. A. Volodin

Institutions: Russian Academy of Sciences, Novosibirsk State University, Siberian Branch of the Russian Academy of Sciences, Institute of Semiconductor Physics, Université de Lorraine

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7140136425

FWCI:

Cites: 9

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