Work

Comprehensive Modeling of Line Edge Roughness and Line Width Roughness in Semiconductor Nanofabrication

Year: 2025

Type: article

Source: Russian Microelectronics

DOI: 10.1134/s1063739725602036

Authors: M. S. Kulpinov, V. V. Losev, A. Y. Krasyukov, V. V. Loseva, A. D. Kalyonov

Institution: National Research University of Electronic Technology

Language: English

Topic: Advancements in Photolithography Techniques

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7140140836

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Cites: 21

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