Work

A Polarization-Sensitive ReS 2 /Si Junction Field-Effect Synaptic Transistor for Biometric Authentication and Imaging Applications

Year: 2026

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.5c25425

Authors: Jian Chai, Rui Yuan, Ai Chen, Xinyi Xu, Jiajun Lu, Xinwei Zhang, Jiabao Sun, Baoshi Qiao, Lingrui Zou, Pu Feng, Shukai Duan, Huan Hu, Xin He, Fei Xue, Feichi Zhou, Lingfei Li, Srikrishna Chanakya Bodepudi, Bin Yu, Yang Xu

Institutions: Zhejiang University, Southwest University, Beijing Institute of Technology, Southern University of Science and Technology

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G2965012344, G8465080798

OpenAlex ID: W7140142164

FWCI:

Cites: 51

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