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Fe 3 GaTe 2 /Ga 2 Ge 2 Te 2 /Fe 3 GaTe 2 : a promising van der Waals magnetic tunnel junction with giant tunnel magnetoresistance

Year: 2026
Type: article
Abstract: The development of all-two-dimensional van der Waals (vdW) magnetic tunnel junctions (MTJs) hold great promise for next-generation spintronic devices. Here, we propose a fully vdW MTJ composed of ferromagnetic Fe 3 GaTe 2 (FGT) as electrodes and a monolayer Ga 2 Ge 2 Te 2 (GGT) as the insulating barrier. Through first-principles quantum transport calculations, we demonstrate that the FGT/GGT/FGT heterostructure exhibits a giant tunnel magnetoresistance (TMR) ratio of 9.15 × 10 6 % and nearly perfect spin polarization (∼99.5%) at equilibrium. The high-performance stems from the strong spin polarization of FGT around the K point and the wide bandgap of GGT near the same momentum region, which collectively suppress unpolarized carrier transmission. Furthermore, the lattice mismatch between FGT and GGT is only 1.5%, and their stacking sequences are symmetry-compatible, leading to atomically sharp interfaces that minimize spin scattering. Spin-resolved local density of states profiles further illustrate the mechanism for high TMR: in the parallel state, a pronounced spin-up density extends across the junction, supporting a low-resistance conducting path, while the spin-down channel and both channels in the anti-parallel state show negligible density within the barrier, indicating high-resistance tunneling states. In addition, the TMR is electrically tunable by bias voltage and remains above 4000% at low biases (<300 mV), indicating robust performance under operational conditions. These results highlight FGT/GGT/FGT as a highly promising system for room-temperature spin valves.
DOI: 10.1088/1361-648x/ae55ef
Institution: Jiangsu University
Language: English
Open Access status: hybrid
Estimated APC paid: $3,325
OpenAlex ID: W7140146155
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Cites: 44
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