Work

Selective Ge sidewall epitaxy and gate stack integration for tri- gate MOSFETs

Year: 2026

Type: article

Source: Materials Science in Semiconductor Processing

DOI: 10.1016/j.mssp.2026.110633

Authors: Chun-Lin Chu, Shu-Han Hsu, Linh Chi T. Cao, Yu-Ming Huang, Guang-Li Luo

Institutions: National Institutes of Applied Research, Thammasat University, Ming Chi University of Technology

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Thammasat University, Thailand Science Research and Innovation

OpenAlex ID: W7140646737

FWCI:

Cites: 9

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Related to: 10