Defect Engineering and Hydrogen Bronze Formation in α‐MoO 3 Crystals by Hydrogen Implantation
Year: 2026
Type: article
Abstract: ABSTRACT Ion implantation is introduced as a novel and controllable approach to incorporate hydrogen into α‐MoO 3 crystals and induce the formation of hydrogen molybdenum bronze phases (H x MoO 3 ) below the implanted layer. By tuning the ion fluence, this technique enables precise defect engineering and phase transformation, offering a versatile and reproducible strategy for tailoring the material functional properties. High‐resolution X‐ray diffraction (HRXRD) reveals a gradual expansion of the b lattice parameter for fluences up to 1 × 10 17 cm −2 , attributed to defect‐induced lattice distortion. For higher fluences, instead of typical strain saturation, a new diffraction peak emerges, revealing the formation of type‐I H x MoO 3 , as also confirmed by Raman spectroscopy. This phase forms below the implanted layer and extends up to ∼1 µm into the material, as confirmed by transmission electron microscopy (TEM). This phase transformation demonstrates reversibility, with the H x MoO 3 signature disappearing upon air annealing at 300°C. HRXRD curve fitting enables assessment of strain/damage profiles evolution with fluence, providing insight into the defect creation and accumulation mechanisms. These structural and compositional changes are accompanied by a quasi‐linear increase of electrical conductivity with fluence, by several orders of magnitude, attributed to the presence of H x MoO 3 phases, extended defects, and new suboxide minority phases.
Source: Small
Institutions: Universidad Complutense de Madrid, University of Lisbon, Instituto de Engenharia de Sistemas e Computadores Microsistemas e Nanotecnologias, Instituto Superior Técnico, Centre National de la Recherche Scientifique, École Nationale Supérieure d'Ingénieurs de Caen, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Centre de Recherche sur les Ions, les Matériaux et la Photonique, Université de Caen Normandie
Language: English
Subfield: Polymers and Plastics
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Awards: G1067616995, G2360840888, G3333591408, G434829738, G4452956635, G4512919725, Processamento de Ga2O3 por feixes de iões, Transístores de efeito de campo de óxidos 2D para biosensores eficientes, G5755453838, INESC Microsistemas e Nanotecnologias – Instituto de Engenharia de Sistemas e Computadores para os Microsistemas e as Nanotecnologias, G6997658380, G8495282863, G8585652581, Defect engineered 2D oxide field effect transistors for efficiente biosensing, Groupe d'Etudes et de Nanoanalyses des Effets d'IrradiationS
OpenAlex ID: W7141014888
