Work

Moiré-Engineered Ferroelectric Transistors for Nearly Trap-Free, Low-Power, and Nonvolatile 2D Electronics

Year: 2026

Type: article

Source: ACS Nano

DOI: 10.1021/acsnano.5c22109

Authors: Arup Singha, Shaili Sett, Kenji Watanabe, Takashi Taniguchi, Arindam Ghosh, Rahul Debnath

Institutions: Indian Institute of Science Bangalore, National Institute for Materials Science

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Department of Science and Technology, Ministry of Science and Technology, India, Ministry of Education, Culture, Sports, Science and Technology, Ministry of Electronics and Information technology, Japan Society for the Promotion of Science, Science and Engineering Research Board, Mission on Nano Science and Technology, Core Research for Evolutional Science and Technology

Awards: G2924232239, G4001760791, G4091144171, G4806815962, G8317128201, G898758523

OpenAlex ID: W7141060418

FWCI:

Cites: 64

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