Year: 2026
Type: article
Abstract: High Resolution Image Download MS PowerPoint Slide Enhancement of the metal-oxide-semiconductor (MOS) characteristics for a thulium oxynitride (Tm x O y N z ) passivation layer (PL) on 4H-silicon carbide (SiC) was achieved through the development of a dual-stage process. This methodology comprised rapid thermal annealing in a nitrogen (N 2 ) ambient, followed by normal annealing (NA) in a forming gas-oxygen-forming gas (FOF) mixture. Analysis by grazing incidence X-ray diffraction (GIXRD) and X-ray photoelectron spectroscopy (XPS) confirmed the successful formation of the Tm x O y N z PL. The additional RTA step enhanced nitrogen incorporation at the Tm x O y N z /4H-SiC interface, effectively reducing oxygen vacancies ( V o ). Data from X-ray reflectivity (XRR) and cross-sectional FESEM corroborated these findings, indicating that the accumulation of nitrogen ions facilitated the development of a thinner interfacial SiO 2 layer with a thickness of 2.422 nm. Consequently, the electrical properties of the dual-stage annealed Tm x O y N z PL were enhanced with a higher dielectric constant ( k = 13.1), lower slow trap density (STD = 4.24 × 10 11 cm –2 ), lower interface trap density ( D it ), and lower leakage current density ( J ).
Source: ACS Omega
Authors: Junchen Deng, Jianhong Chen, Hock Jin Quah
Institutions: Universiti Sains Malaysia, Lanzhou City University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,935
OpenAlex ID: W7141143416