Work

Impact of arsenic species on InAs/GaSb type II superlattice grown by molecular beam epitaxy

Year: 2026

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/6.0005316

Authors: Wei-Sheng Liu, Po Hao Chang, Balaji Gururajan, Bhavya Kondapavuluri, Tsun-Jie Ko, Ming-En Hsu, Yung-Jyun Liao, Jen-Inn Chyi

Institutions: Yuan Ze University, National Central University

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Taiwan Semiconductor Research Institute, National Applied Research Laboratories, National Science and Technology Council

Awards: G4066223270, Development of High-Efficiency Thin-Film X-Ray Scintillation Detectors Based on Ce-Doped Ga₂O₃/Igzo for Advanced Applications, Development of Inas/Inassb Superlattice-Based Infrared Photodetectors Using Molecular Beam Epitaxy, G734607784

OpenAlex ID: W7141213635

FWCI:

Cites: 29

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