Work

Virtual ECCI and dislocation density tensor (D5.3)

Year: 2025

Type: article

Abstract: Dislocations create elastic fields, detectable by surface-sensitive techniques like EBSD and ECCI. In this report, a field dislocation mechanics (FDM) model to compare surface and bulk dislocation signatures in GaN layers on Si substrates is used. Significant differences between surface and bulk fields highlight potential misinterpretations in surface-based dislocation characterization. Metrics for accurate dislocation characterization and perform virtual ECCI are established.

Source: Zenodo (CERN European Organization for Nuclear Research)

DOI: 10.5281/zenodo.19248023

Author: El Ajjouri, Fatin

Institution: Université de Lorraine

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funder: European Commission

Award: Advanced modelling and characterization for power semiconductor materials and technologies