Work

Evolution of Cu metallization microstructure during electro-thermal ageing (D4.1)

Year: 2025

Type: article

Abstract: Plastic deformation of Cu metallization in power devices results from a combination of heat and thermomechanical stress, mainly produced by the difference in CTE between the metal and the semiconductor and oxides. Using electron microscopy, we found that the deformation mechanisms implying dislocation activities explain a minor portion of the changes endured by the copper. It is therefore supposed that pore formation and cracks growth result from another mechanism, probably grain boundary accelerated diffusion.

Source: Zenodo (CERN European Organization for Nuclear Research)

DOI: 10.5281/zenodo.19247863

Author: Legros, Marc

Institution: Centre National de la Recherche Scientifique

Language: English

Topic: Copper Interconnects and Reliability

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funder: European Commission

Award: Advanced modelling and characterization for power semiconductor materials and technologies