Work

Oxidant-driven growth and crystallization of MoOx in H2-gas-free thermal atomic layer deposition using a high-volatility liquid Mo precursor

Year: 2026

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/6.0005336

Authors: Nu Ri Kim, Yeo-Bin Youn, Se Won Yoon, Jae Woo Baek, Kyong Jun Sun, Chan Ung Jang, Jun Young Kim, Min-Woo Kim

Institution: Myongji University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Myongji University, Ministry of Education, Ministry of Trade, Industry and Energy, Korea Institute for Advancement of Technology, Samsung Display

Awards: G1014671215, G1275211850, G2456359088, G6016293687

OpenAlex ID: W7141660129

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Cites: 65

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